
ADPA7004CHIP-SX
Active40 GHZ TO 80 GHZ, GAAS, PHEMT, MMIC, WIDEBAND POWER AMPLIFIER
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ADPA7004CHIP-SX
Active40 GHZ TO 80 GHZ, GAAS, PHEMT, MMIC, WIDEBAND POWER AMPLIFIER
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Technical Specifications
Parameters and characteristics for this part
| Specification | ADPA7004CHIP-SX |
|---|---|
| Current - Supply | 550 mA |
| Frequency (Max) | 80 GHz |
| Frequency (Min) | 40 GHz |
| Gain | 16 dB |
| Mounting Type | Surface Mount |
| P1dB | 22 dBm |
| Package / Case | Die |
| Package Name | Die |
| RF Type | General Purpose |
| Test Frequency (Maximum) | 75 GHz |
| Test Frequency (Minimum) | 45 GHz |
| Voltage - Supply (Maximum) | 4 V |
| Voltage - Supply (Minimum) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
CAD
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Description
General part information
ADPA7004 Series
The ADPA7004CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector that operates from 40 GHz to 80 GHz. In the lower band of 40 GHz to 45 GHz, the ADPA7004CHIPS provides a gain of 17 dB typical, an output third-order intercept (IP3) of 30.5 dBm, and output power for 1 dB gain compression (P1dB) of 21.5 dBm. In the upper band of 75 GHz to 80 GHz, the ADPA7004CHIPS provides a gain of 16 dB (typical), an output IP3 of 31.5 dBm, and an output P1dB of 20.5 dBm. The ADPA7004CHIPS requires 550 mA from a 3.5 V supply. The ADPA7004CHIPS amplifier input and output are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.APPLICATIONSTest instrumentationMilitary and spaceTelecommunications infrastructure
Documents
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