Discrete Semiconductor Products

IPP77N06S212AKSA2

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IPP77N06S2-12 IS AN AUTOMOTIVE MOSFET OFFERING 55V, N-CH, 12 MΩ MAX, TO-220, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ULTRA LOW RDS(ON).

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Discrete Semiconductor Products

Active

IPP77N06S2-12 IS AN AUTOMOTIVE MOSFET OFFERING 55V, N-CH, 12 MΩ MAX, TO-220, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ULTRA LOW RDS(ON).

Technical Specifications

Parameters and characteristics for this part

Specification	IPP77N06S212AKSA2

Current - Continuous Drain (Id) @ 25°C	77 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	158 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Power Dissipation (Max) [Max]	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Qualification	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Grade	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type
INFINEON IPP77N06S212AKSA2	55 V	60 nC	MOSFET (Metal Oxide)	TO-220-3	158 W	20 V	175 °C	-55 °C	4 V	12 mOhm	AEC-Q101	PG-TO220-3-1	77 A	1770 pF	Automotive	10 V	N-Channel	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 77A (Tc) 158W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources