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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

IRF4104PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 5.5 MOHM;

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENMOSFET OptiMOS™ datasheet explanation (PDF)+2
ONSEMI ISL9V3040P3
Discrete Semiconductor Products

IRF4104PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 5.5 MOHM;

Deep-Dive with AI

DocumentsTechnical Data Sheet ENMOSFET OptiMOS™ datasheet explanation (PDF)+2

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF4104PBF
Current - Continuous Drain (Id) @ 25°C75 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs100 nC
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]140 W
Rds On (Max) @ Id, Vgs5.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 115$ 2.39
Tube 1$ 2.00
10$ 1.29
100$ 0.89
500$ 0.84
MouserN/A 1$ 1.86
10$ 1.29
100$ 1.02
500$ 0.85
1000$ 0.73
2000$ 0.69
5000$ 0.67
NewarkEach 1$ 2.52
10$ 1.63
100$ 1.12
500$ 0.90
1000$ 0.82
3000$ 0.76
5000$ 0.75

Description

General part information

IRF4104 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.