Discrete Semiconductor Products

2SD16400Q

Obsolete

TRANS NPN DARL 100V 2A TO126B-A1

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 100V 2A TO126B-A1

Technical Specifications

Parameters and characteristics for this part

Specification	2SD16400Q

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	4000
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.2 W
Supplier Device Package	TO-126B-A1
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition
Panasonic Electronic Components 2SD16400Q	150 °C	1.5 V	TO-126-3 TO-225AA	4000	100 V	2 A	1.2 W	TO-126B-A1	Through Hole	100 nA
Panasonic Electronic Components 2SD16450R	150 °C	1.8 V	TO-126-3 TO-225AA		60 V	1 A	5 W	TO-126B-A1	Through Hole	1 µA	8000	150 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 1.2 W Through Hole TO-126B-A1

Technical documentation and resources