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IPZ40N04S5L3R6ATMA1
Discrete Semiconductor Products

IPZ40N04S5L3R6ATMA1

LTB
INFINEON

INFINEON’S IPZ40N04S5L-3R6 IS A HIGH-EFFICIENCY MOSFET WITH LOW RDS(ON) OF 3.6MΩ, IDEAL FOR POWER MANAGEMENT. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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IPZ40N04S5L3R6ATMA1
Discrete Semiconductor Products

IPZ40N04S5L3R6ATMA1

LTB
INFINEON

INFINEON’S IPZ40N04S5L-3R6 IS A HIGH-EFFICIENCY MOSFET WITH LOW RDS(ON) OF 3.6MΩ, IDEAL FOR POWER MANAGEMENT. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Technical Specifications

Parameters and characteristics for this part

SpecificationIPZ40N04S5L3R6ATMA1
Current - Continuous Drain (Id) @ 25°C87 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1966 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)58 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs3.6 mOhm
Supplier Device PackagePG-TSDSON-8-33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2598$ 1.31
MouserN/A 5000$ 0.32
10000$ 0.30

Description

General part information

IPZ40N04 Series

INFINEON’S IPZ40N04S5L-3R6 IS A HIGH-EFFICIENCY MOSFET WITH LOW RDS(ON) OF 3.6MΩ, IDEAL FOR POWER MANAGEMENT. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Documents

Technical documentation and resources