Specification	IMD10AT108

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	68, 100
Frequency - Transition	200 MHz, 250 MHz
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Power - Max [Max]	300 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SMT6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic [Max]	300 mV, 300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

IMD10 Series

Part	Resistor - Emitter Base (R2)	Power - Max [Max]	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max)	Mounting Type
Rohm Semiconductor IMD10AT108	10 kOhms	300 mW	200 MHz 250 MHz	SC-74 SOT-457	50 V	1 NPN 1 PNP	300 mV 300 mV	68 100	500 nA	SMT6	100 mA 500 mA	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA, 500mA 250MHz, 200MHz 300mW Surface Mount SMT6