Specification	IMD10AT108

Current - Collector (Ic) (Max)	100 mA, 500 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100, 68
Frequency - Transition	200 MHz, 250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-457, SC-74
Power - Max [Max]	300 mW
Resistor - Base (R1)	100 Ohms, 10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SMT6
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV, 300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

IMD10 Series

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Power - Max [Max]	Mounting Type	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Current - Collector (Ic) (Max)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Rohm Semiconductor IMD10AT108	SC-74 SOT-457	68 100	SMT6	50 V	200 MHz 250 MHz	300 mW	Surface Mount	10 kOhms	10 kOhms 100 Ohms	100 mA 500 mA	1 NPN 1 PNP - Pre-Biased (Dual)	500 nA	300 mV 300 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA, 500mA 250MHz, 200MHz 300mW Surface Mount SMT6