Discrete Semiconductor Products

SIDC23D60E6X1SA5

Obsolete

DIODE GEN PURP 600V 50A DIE

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 50A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC23D60E6X1SA5

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Die
Speed [Min]	200 mA, 500 ns
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Speed [Min]	Mounting Type	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)
INFINEON SIDC23D60E6X1SA5	27 µA	Die	600 V	-55 °C	150 °C	Die	200 mA 500 ns	Surface Mount	Standard	1.25 V	50 A
INFINEON SIDC23D60E6X1SA1	27 µA	Die	600 V	-55 °C	150 °C	Die	200 mA 500 ns	Surface Mount	Standard	1.25 V	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 50A Surface Mount Die

Technical documentation and resources