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TK290P60Y - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.29 Ω@10V, DPAK, DTMOSⅤ
Discrete Semiconductor Products

TK5R1P08QM,RQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0051 Ω@10V, DPAK, U-MOSⅩ-H

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TK290P60Y - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.29 Ω@10V, DPAK, DTMOSⅤ
Discrete Semiconductor Products

TK5R1P08QM,RQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0051 Ω@10V, DPAK, U-MOSⅩ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK5R1P08QM,RQ
Current - Continuous Drain (Id) @ 25°C84 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3980 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs5.1 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 10016$ 1.99

Description

General part information

TK5R1P08QM Series

12V - 300V MOSFETs, N-ch MOSFET, 80 V, 0.0051 Ω@10V, DPAK, U-MOSⅩ-H

Documents

Technical documentation and resources

MOSFET Self-Turn-On Phenomenon

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

Simplified CFD Model Application Note

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter

Application Note

Derating of the MOSFET Safe Operating Area

Application Note

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

RC Snubbers for Step-Down Converters

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

Electrical Characteristics: Power MOSFET Application Notes

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

MOSFET SPICE model grade

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

Maximum Ratings: Power MOSFET Application Notes

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

Hints and Tips for Thermal Design part3

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note

TK5R1P08QM Data sheet/Japanese

Data sheet

Avalanche energy calculation

Application Note

MOSFET Secondary Breakdown

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

Motor Control (Vacuum Cleaners)

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes

Application Note

TK5R1P08QM Data sheet/English

Data sheet

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

Resonant Circuits and Soft Switching

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

Selection Guide MOSFETs 2025 Rev1.0

Catalog