Integrated Circuits (ICs)

2ED2101S06FXUMA1

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INFINEON

THE 2ED2101S06F IS A 650 V HIGH-SIDE AND LOW-SIDE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE (DSO-8 PACKAGE)

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DocumentsDatasheet Technical Data Sheet EN

Integrated Circuits (ICs)

2ED2101S06FXUMA1

Active

INFINEON

THE 2ED2101S06F IS A 650 V HIGH-SIDE AND LOW-SIDE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE (DSO-8 PACKAGE)

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2ED2101S06FXUMA1

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	700 mA
Driven Configuration	High-Side and Low-Side
Gate Type	IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	650 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	1.7 V
Logic Voltage - VIL, VIH [custom]	1.1 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ) [custom]	70 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	PG-DSO-8-69
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

2ED2101 Series

Part	Number of Drivers	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Package / Case	Package / Case	Package / Case	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Channel Type	Gate Type	High Side Voltage - Max (Bootstrap) [Max]
INFINEON 2ED2101S06FXUMA1	2	Non-Inverting	70 ns	35 ns	PG-DSO-8-69	Surface Mount	125 °C	-40 °C	290 mA	700 mA	20 V	10 VDC	High-Side and Low-Side	0.154 in	8-SOIC	3.9 mm	1.7 V	1.1 V	Independent	IGBT MOSFET (N-Channel)	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.19
		10	$ 0.86
		25	$ 0.78
		100	$ 0.69
		250	$ 0.65
		500	$ 0.62
		1000	$ 0.60
	Digi-Reel®	1	$ 1.19
		10	$ 0.86
		25	$ 0.78
		100	$ 0.69
		250	$ 0.65
		500	$ 0.62
		1000	$ 0.60
	N/A	2268	$ 1.19
	Tape & Reel (TR)	2500	$ 0.58
		5000	$ 0.56
		7500	$ 0.55
		12500	$ 0.55
		17500	$ 0.54

Description

General part information

2ED2101 Series

650 V high speed,high-side and low-sidegate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving powerMOSFETs andIGBTs. Based on ourSOI-technology, the 2ED2101S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.