Discrete Semiconductor Products

MBR3U200-TP

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DIODE ARRAY SCHOT 200V 3A TO-277

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Discrete Semiconductor Products

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DIODE ARRAY SCHOT 200V 3A TO-277

Technical Specifications

Parameters and characteristics for this part

Specification	MBR3U200-TP

Current - Average Rectified (Io) (per Diode)	3 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-277, 3-PowerDFN
Speed	500 ns, 200 mA
Supplier Device Package	TO-277
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	0.85 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]
MCC (Micro Commercial Components) MBR3U200-TP	200 V	200 mA 500 ns	TO-277	TO-277 3-PowerDFN	50 µA	3 A	Schottky	-55 °C	150 °C	Surface Mount	0.85 V
MCC (Micro Commercial Components) MBR3U200-TP	200 V	200 mA 500 ns	TO-277	TO-277 3-PowerDFN	50 µA	3 A	Schottky	-55 °C	150 °C	Surface Mount	0.85 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 200 V 3A Surface Mount TO-277, 3-PowerDFN

Technical documentation and resources