Discrete Semiconductor Products

SI7445DP-T1-E3

Obsolete

MOSFET P-CH 20V 12A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 12A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7445DP-T1-E3

Current - Continuous Drain (Id) (Ta)	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	140 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	7.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Vgs(th) (Max)	Technology	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Package / Case	Rds On (Max)	Package Name	Drain to Source Voltage (Vdss)	Mounting Type
Vishay Dale SI7445DP-T1-E3	1 V	MOSFET (Metal Oxide)	140 nC	8 V	1.9 W	4.5 V	1.8 V	-55 °C	150 °C	P-Channel	12 A	PowerPAK® 1212-8	7.7 mOhm	PowerPAK® 1212-8	20 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.45	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 12A (Ta) 1.9W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available