Discrete Semiconductor Products

SI7445DP-T1-E3

Obsolete

MOSFET P-CH 20V 12A PPAK 1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 12A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7445DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	140 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	7.7 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI7445DP-T1-E3	Surface Mount	MOSFET (Metal Oxide)	8 V	12 A	1.8 V 4.5 V	PowerPAK® 1212-8	-55 °C	150 °C	7.7 mOhm	1 V	P-Channel	PowerPAK® 1212-8	140 nC	20 V	1.9 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 12A (Ta) 1.9W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available