Specification	ISL9R30120G2

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-2
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.3 V

ISL9R30120G2 Series

30A, 1200V, STEALTH™ Diode

Part	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
ON Semiconductor ISL9R30120G2	TO-247-2	30 A	1.2 kV	200 mA 500 ns	Avalanche	3.3 V	Through Hole	TO-247-2	100 µA	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ISL9R30120G2 Series

The ISL9R30120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRand short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.