Discrete Semiconductor Products

IPS65R1K4C6AKMA1

Obsolete

MOSFET N-CH 650V 3.2A TO251-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 3.2A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS65R1K4C6AKMA1

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	28 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Package / Case	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
INFINEON IPS65R1K0CEAKMA2	328 pF	PG-TO251-3-342	3.5 V	1 Ohm	20 V	TO-251-3 Stub Leads IPAK	68 W	N-Channel	10 V	Through Hole	15.3 nC	MOSFET (Metal Oxide)	150 °C	-55 °C	7.2 A	650 V
INFINEON IPS65R1K4C6AKMA1	225 pF	PG-TO251-3-11	3.5 V		20 V	TO-251-3 Stub Leads IPAK	28 W	N-Channel	10 V	Through Hole	10.5 nC	MOSFET (Metal Oxide)	150 °C	-55 °C	3.2 A	650 V	1.4 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 650 V 3.2A (Tc) 28W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources

No documents available