Discrete Semiconductor Products
2N7002PW,115
NRNDNexperia USA Inc.
60 V, 310 MA N-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
2N7002PW,115
NRNDNexperia USA Inc.
60 V, 310 MA N-CHANNEL TRENCH MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N7002PW,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 310 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-323, SC-70 |
| Power Dissipation (Max) | 260 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm |
| Supplier Device Package | SOT-323 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 113838 | $ 0.32 | |
Description
General part information
2N7002PW Series
60 V, 310 mA N-channel Trench MOSFET
Documents
Technical documentation and resources