Specification	BAS21-QAZ

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	330 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	3-XDFN Exposed Pad
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	DFN1010D-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

BAS21-Q Series

High-voltage switching diode

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction	Mounting Type	Grade	Technology	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Speed	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Qualification
Nexperia USA Inc. BAS21-QAZ	100 nA	200 V	50 ns	150 ¯C	Surface Mount	Automotive	Standard	330 mA	3-XDFN Exposed Pad	DFN1010D-3	200 mA 500 ns	2 pF	1.25 V	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.02

General part information

High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources