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TO-220AB Full Pack
Discrete Semiconductor Products

IRFIZ24NPBF

LTB
INFINEON

IR MOSFET™ N-CHANNEL ; TO-220 FULLPAK PACKAGE; 70 MOHM;

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TO-220AB Full Pack
Discrete Semiconductor Products

IRFIZ24NPBF

LTB
INFINEON

IR MOSFET™ N-CHANNEL ; TO-220 FULLPAK PACKAGE; 70 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFIZ24NPBF
Current - Continuous Drain (Id) @ 25°C14 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]370 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)29 W
Rds On (Max) @ Id, Vgs70 mOhm
Supplier Device PackageTO-220AB Full-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2$ 1.87
2$ 1.87
98$ 0.85
98$ 0.85
Tube 1$ 1.88
1$ 1.88
50$ 0.90
50$ 0.90
100$ 0.81
100$ 0.81
500$ 0.64
500$ 0.64

Description

General part information

IRFIZ24 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources