Discrete Semiconductor Products

SKW25N120FKSA1

Obsolete

IGBT 1200V 46A 313W TO247-3

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Discrete Semiconductor Products

Obsolete

IGBT 1200V 46A 313W TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	SKW25N120FKSA1

Current - Collector (Ic) (Max) [Max]	46 A
Current - Collector Pulsed (Icm)	84 A
Gate Charge	225 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	313 W
Reverse Recovery Time (trr)	90 ns
Supplier Device Package	PG-TO247-3-1
Switching Energy	3.7 mJ
Td (on/off) @ 25°C [custom]	730 ns
Td (on/off) @ 25°C [custom]	45 ns
Vce(on) (Max) @ Vge, Ic	3.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Switching Energy	Current - Collector Pulsed (Icm)	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Reverse Recovery Time (trr)	Package / Case	Gate Charge	IGBT Type	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON SKW25N120FKSA1	3.7 mJ	84 A	Through Hole	1200 V	46 A	313 W	90 ns	TO-247-3	225 nC	NPT	3.6 V	730 ns	45 ns	PG-TO247-3-1	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT NPT 1200 V 46 A 313 W Through Hole PG-TO247-3-1

Technical documentation and resources