Discrete Semiconductor Products

BUK78150-55A/CUF

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MOSFET N-CH 55V 5.5A SOT223

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Discrete Semiconductor Products

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MOSFET N-CH 55V 5.5A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	BUK78150-55A/CUF

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Qualification	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Grade
Freescale Semiconductor - NXP BUK78150-55A/CUF	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	10 V	SOT-223	N-Channel	5.5 A	AEC-Q101	55 V	8 W	20 V	230 pF	-55 °C	150 °C	Surface Mount	150 mOhm	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 5.5A (Tc) 8W (Tc) Surface Mount SOT-223

Technical documentation and resources