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SOT1061
Discrete Semiconductor Products

PBSS4630PA,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 20 V; 1 A PNP LOW VCESAT (BISS) TRANSISTOR

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DocumentsPBSS4630PA Nexperia Product Reliabilityplastic, leadless thermal enhanced ultra thin small outline package; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body+8
SOT1061
Discrete Semiconductor Products

PBSS4630PA,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 20 V; 1 A PNP LOW VCESAT (BISS) TRANSISTOR

Deep-Dive with AI

DocumentsPBSS4630PA Nexperia Product Reliabilityplastic, leadless thermal enhanced ultra thin small outline package; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body+8

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4630PA,115
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]260
Frequency - Transition115 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-PowerUDFN
Power - Max [Max]2.1 W
Supplier Device Package3-HUSON
Supplier Device Package [x]2
Supplier Device Package [y]2
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic275 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 5713$ 0.89
MouserN/A 1$ 0.55
10$ 0.35
100$ 0.28
500$ 0.21
1000$ 0.18
3000$ 0.16
6000$ 0.13

Description

General part information

PBSS4630PA Series

NPN low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.