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TO-247-3 AC EP
Discrete Semiconductor Products

IRFP3415PBF

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INFINEON

IR MOSFET™ N-CHANNEL ; TO-247 PACKAGE; 42 MOHM;

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Search across all available documentation for this part.

DocumentsIR Part Numbering SystemDatasheet+2
TO-247-3 AC EP
Discrete Semiconductor Products

IRFP3415PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL ; TO-247 PACKAGE; 42 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering SystemDatasheet+2

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFP3415PBF
Current - Continuous Drain (Id) @ 25°C43 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]200 nC
Input Capacitance (Ciss) (Max) @ Vds2400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)200 W
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
Tube 1$ 2.27
25$ 1.80
100$ 1.54
500$ 1.51
MouserN/A 1$ 3.06
10$ 2.91
25$ 2.90
100$ 2.03
400$ 2.02
NewarkEach 1$ 3.28
10$ 3.03
100$ 1.68
800$ 1.56

Description

General part information

IRFP3415 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.