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BSZ0908NDXTMA2
Discrete Semiconductor Products

BSZ0908NDXTMA2

Obsolete
INFINEON

MOSFET 2N-CH 30V 4.8A WISON-8

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BSZ0908NDXTMA2
Discrete Semiconductor Products

BSZ0908NDXTMA2

Obsolete
INFINEON

MOSFET 2N-CH 30V 4.8A WISON-8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ0908NDXTMA2
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C7.6 A, 4.8 A
Drain to Source Voltage (Vdss)30 V
FET Feature4.5 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3 nC, 6.4 nC
Input Capacitance (Ciss) (Max) @ Vds730 pF, 340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max700 mW, 860 mW
Rds On (Max) @ Id, Vgs9 mOhm, 18 mOhm
Supplier Device PackagePG-WISON-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

BSZ0908 Series

Mosfet Array 30V 4.8A (Ta), 7.6A (Ta) 700mW (Ta), 860mW (Ta) Surface Mount PG-WISON-8

Documents

Technical documentation and resources

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