Discrete Semiconductor Products

IKP20N60TAHKSA1

NRND

IGBT 600V 40A 166W TO220-3-1

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Discrete Semiconductor Products

NRND

IGBT 600V 40A 166W TO220-3-1

Technical Specifications

Parameters and characteristics for this part

Specification	IKP20N60TAHKSA1

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	120 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3
Power - Max [Max]	166 W
Reverse Recovery Time (trr)	41 ns
Supplier Device Package	PG-TO220-3-1
Switching Energy	770 µJ
Td (on/off) @ 25°C	18 ns, 199 ns
Test Condition	20 A, 12 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.05 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	IGBT Type	Td (on/off) @ 25°C	Mounting Type	Power - Max [Max]	Reverse Recovery Time (trr)	Test Condition	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Gate Charge	Current - Collector Pulsed (Icm)	Switching Energy
INFINEON IKP20N60TAHKSA1	175 °C	-40 °C	40 A	Trench Field Stop	18 ns 199 ns	Through Hole	166 W	41 ns	12 Ohm 15 V 20 A 400 V	PG-TO220-3-1	2.05 V	600 V	TO-220-3	120 nC	60 A	770 µJ
INFINEON IKP20N60TXKSA1	175 °C	-40 °C	40 A	Trench Field Stop	18 ns 199 ns	Through Hole	166 W	41 ns	12 Ohm 15 V 20 A 400 V	PG-TO220-3-1	2.05 V	600 V	TO-220-3	120 nC	60 A	770 µJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 600 V 40 A 166 W Through Hole PG-TO220-3-1

Technical documentation and resources