Discrete Semiconductor Products

IRGB4B60KD1PBF

Obsolete

IGBT NPT 600V 11A TO-220AB

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Discrete Semiconductor Products

Obsolete

IGBT NPT 600V 11A TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRGB4B60KD1PBF

Current - Collector (Ic) (Max) [Max]	11 A
Current - Collector Pulsed (Icm)	22 A
Gate Charge	12 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	63 W
Reverse Recovery Time (trr)	93 ns
Supplier Device Package	TO-220AB
Switching Energy [custom]	73 µJ
Switching Energy [custom]	47 µJ
Td (on/off) @ 25°C	100 ns, 22 ns
Test Condition	4 A, 400 V, 15 V, 100 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	IGBT Type	Test Condition	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	Gate Charge	Switching Energy [custom]	Switching Energy [custom]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)
INFINEON IRGB4B60KPBF	TO-220-3	12 A	NPT	4 A 15 V 100 Ohm 400 V	2.5 V	175 °C	-55 °C	63 W	600 V	Through Hole	TO-220AB	12 nC	130 µJ	83 µJ	22 ns 100 ns
INFINEON IRGB4B60KD1PBF	TO-220-3	11 A	NPT	4 A 15 V 100 Ohm 400 V	2.5 V	175 °C	-55 °C	63 W	600 V	Through Hole	TO-220AB	12 nC	73 µJ	47 µJ	22 ns 100 ns	22 A	93 ns
INFINEON IRGB4B60KD1PBF	TO-220-3	11 A	NPT	4 A 15 V 100 Ohm 400 V	2.5 V	175 °C	-55 °C	63 W	600 V	Through Hole	TO-220AB	12 nC	73 µJ	47 µJ	22 ns 100 ns	22 A	93 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT NPT 600 V 11 A 63 W Through Hole TO-220AB

Technical documentation and resources

No documents available