Discrete Semiconductor Products

AUIRL7766M2TR

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MOSFET N-CH 100V 10A DIRECTFET

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 10A DIRECTFET

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRL7766M2TR

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	66 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric M4
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	DirectFET™ Isometric M4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
INFINEON AUIRL7766M2TR	175 °C	-55 °C	N-Channel	16 V	MOSFET (Metal Oxide)	10 A	DirectFET™ Isometric M4	5305 pF	Surface Mount	Automotive	66 nC	10 mOhm	AEC-Q101	4.5 V 10 V	DirectFET™ Isometric M4	100 V	2.5 V
INFINEON AUIRL7766M2TR	175 °C	-55 °C	N-Channel	16 V	MOSFET (Metal Oxide)	10 A	DirectFET™ Isometric M4	5305 pF	Surface Mount	Automotive	66 nC	10 mOhm	AEC-Q101	4.5 V 10 V	DirectFET™ Isometric M4	100 V	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 10A (Ta) 2.5W (Ta), 62.5W (Tc) Surface Mount DirectFET™ Isometric M4

Technical documentation and resources