Discrete Semiconductor Products

IPI530N15N3GXKSA1

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MOSFET N-CH 150V 21A TO262-3

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 150V 21A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI530N15N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	887 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs
INFINEON IPI530N15N3GXKSA1	4 V	175 °C	-55 °C	20 V	150 V	887 pF	8 V 10 V	MOSFET (Metal Oxide)	12 nC	Through Hole	N-Channel	PG-TO262-3	68 W	21 A	I2PAK TO-262-3 Long Leads TO-262AA	53 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 150 V 21A (Tc) 68W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available