Discrete Semiconductor Products
S1FLJ-GS18
ActiveVishay General Semiconductor - Diodes Division
DIODE GP 600V 700MA DO219AB
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DocumentsDatasheet
Discrete Semiconductor Products
S1FLJ-GS18
ActiveVishay General Semiconductor - Diodes Division
DIODE GP 600V 700MA DO219AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | S1FLJ-GS18 |
|---|---|
| Capacitance @ Vr, F | 4 pF |
| Current - Average Rectified (Io) | 700 mA |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | DO-219AB |
| Reverse Recovery Time (trr) | 1.8 µs |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-219AB (SMF) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 50000 | $ 0.04 | |
| 150000 | $ 0.04 | |||
Description
General part information
S1F Series
Diode 600 V 700mA Surface Mount DO-219AB (SMF)
Documents
Technical documentation and resources
