Discrete Semiconductor Products

MJE13001-AP

Obsolete

TRANS NPN 400V 0.2A TO92

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 400V 0.2A TO92

Technical Specifications

Parameters and characteristics for this part

Specification	MJE13001-AP

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10 hFE
Frequency - Transition	8 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]
Micro Commercial Components MJE13001-AP	400 V	Through Hole	500 mV	TO-226-3 TO-92-3	TO-92	10 hFE	100 µA	1 W	NPN	200 mA	8 MHz	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 400 V 200 mA 8MHz 1 W Through Hole TO-92

Technical documentation and resources

No documents available