Discrete Semiconductor Products

UMF21NTR

NRND

DIGITAL TRANSISTORS PNP/DTR BIP 12V .5A

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Discrete Semiconductor Products

NRND

DIGITAL TRANSISTORS PNP/DTR BIP 12V .5A

Technical Specifications

Parameters and characteristics for this part

Specification	UMF21NTR

Current - Collector (Ic) (Max)	100 mA, 500 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	270, 30
Frequency - Transition [Max]	260 MHz
Frequency - Transition [Min]	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	UMT6
Transistor Type	1 PNP, 1 NPN Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV, 300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	12 V

Part	Frequency - Transition [Max]	Frequency - Transition [Min]	Current - Collector (Ic) (Max)	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Supplier Device Package
Rohm Semiconductor UMF21NTR	260 MHz	250 MHz	100 mA 500 mA	250 mV 300 mV	1 NPN Pre-Biased 1 PNP	12 V	50 V	Surface Mount	500 nA	10 kOhms	30 270	6-TSSOP SC-88 SOT-363	UMT6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 260MHz 150mW Surface Mount UMT6

Technical documentation and resources