Specification	CSD17578Q3A

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1590 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	37 W, 3.2 W
Rds On (Max) @ Id, Vgs	7.3 mOhm
Supplier Device Package	8-VSONP (3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.9 V

CSD17578Q3A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm

Part	Technology	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments CSD17578Q5A	MOSFET (Metal Oxide)	Surface Mount	20 V	6.9 mOhm	30 V	8-VSONP (5x6)	4.5 V 10 V	1510 pF	N-Channel	22.3 nC	-55 °C	150 °C	3.1 W 42 W	1.9 V	8-PowerTDFN	25 A
Texas Instruments CSD17578Q3A	MOSFET (Metal Oxide)	Surface Mount	20 V	7.3 mOhm	30 V	8-VSONP (3x3.3)	4.5 V 10 V	1590 pF	N-Channel		-55 °C	150 °C	3.2 W 37 W	1.9 V	8-PowerVDFN	20 A	22.2 nC
Texas Instruments CSD17578Q3AT	MOSFET (Metal Oxide)	Surface Mount	20 V	7.3 mOhm	30 V	8-VSONP (3x3.3)	4.5 V 10 V	1590 pF	N-Channel		-55 °C	150 °C	3.2 W 37 W	1.9 V	8-PowerVDFN	20 A	22.2 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources