Specification	TTC004B,Q

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	140
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	10 W
Supplier Device Package	TO-126N
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	160 V

TTC004B Series

Bipolar Transistors, NPN Bipolar Transistor, 160 V, 1.5 A, TO-126N

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
Toshiba Semiconductor and Storage TTC004B,Q	160 V	140	NPN	150 °C	1.5 A	100 nA	Through Hole	TO-126N	10 W	TO-126-3 TO-225AA	500 mV	100 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.90

General part information

Bipolar Transistors, NPN Bipolar Transistor, 160 V, 1.5 A, TO-126N

Technical documentation and resources