Discrete Semiconductor Products

SICAC1060P-TP

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INTERFACE

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Discrete Semiconductor Products

Active

INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	SICAC1060P-TP

Capacitance @ Vr, F	452 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	44 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	8-PowerTDFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DFN5060
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Capacitance @ Vr, F	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed
Micro Commercial Components SICAC1060P-TP	452 pF	Surface Mount	SiC (Silicon Carbide) Schottky	650 V	44 µA	0 ns	DFN5060	8-PowerTDFN	1.6 V	10 A	175 ░C	-55 C	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	5000	$ 2.11

General part information

Diode 650 V 10A Surface Mount DFN5060

Technical documentation and resources