Discrete Semiconductor Products

KSC3502ES

Obsolete

TRANS NPN 200V 0.1A TO126-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 200V 0.1A TO126-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC3502ES

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.2 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Operating Temperature	Transistor Type	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type
ON Semiconductor KSC3502ES	100	100 mA	1.2 W	200 V	600 mV	150 MHz	150 °C	NPN	TO-126-3 TO-225AA	TO-126-3	100 nA	Through Hole
ON Semiconductor KSC3502ESTU	100	100 mA	1.2 W	200 V	600 mV	150 MHz	150 °C	NPN	TO-126-3 TO-225AA	TO-126-3	100 nA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 200 V 100 mA 150MHz 1.2 W Through Hole TO-126-3

Technical documentation and resources