Discrete Semiconductor Products

BYV15-TR

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DIODE AVALANCHE 800V 1.5A SOD57

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Discrete Semiconductor Products

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DIODE AVALANCHE 800V 1.5A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BYV15-TR

Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	300 ns
Speed	500 ns, 200 mA
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	800 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division BYV15-TR	175 ░C	-55 °C	300 ns	SOD-57	SOD-57 Axial	200 mA 500 ns	800 V	Avalanche	Through Hole	1.5 A	5 µA
Vishay General Semiconductor - Diodes Division BYV15-TAP	175 ░C	-55 °C	300 ns	SOD-57	SOD-57 Axial	200 mA 500 ns	800 V	Avalanche	Through Hole	1.5 A	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 1.5A Through Hole SOD-57

Technical documentation and resources