Discrete Semiconductor Products

PJQ2405-AU_R1_000A1

NRND

20V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

NRND

20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2405-AU_R1_000A1

Current - Continuous Drain (Id) @ 25°C	7.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	DFN2020B-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Qualification	Grade
Panjit International Inc. PJQ2405_R1_00001	MOSFET (Metal Oxide)	1.8 V 4.5 V	1785 pF	18.9 nC	7.2 A	900 mV	Surface Mount	8 V	DFN2020B-6	32 mOhm	20 V	2.8 W	-55 °C	150 °C	P-Channel
Panjit International Inc. PJQ2405-AU_R1_000A1	MOSFET (Metal Oxide)	1.8 V 4.5 V	1785 pF	18.9 nC	7.2 A	900 mV	Surface Mount	8 V	DFN2020B-6	32 mOhm	20 V	2.8 W	-55 °C	150 °C	P-Channel	AEC-Q101	Automotive

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General part information

P-Channel 20 V 7.2A 2.8W (Ta) Surface Mount DFN2020B-6

Technical documentation and resources