PSMN045-100HLX

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MOSFET 2N-CH 100V 21A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 21A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN045-100HLX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	18.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2152 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	53 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Configuration	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PSMN045-100HLX	21 A	18.5 nC	2 N-Channel (Dual)	Surface Mount	42 mOhm	8-LFPAK56 SOT-1205	LFPAK56D	100 V	MOSFET (Metal Oxide)	53 W	2152 pF	-55 °C	175 ░C	Logic Level Gate	2.1 V

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General part information

Mosfet Array 100V 21A (Ta) 53W (Ta) Surface Mount LFPAK56D

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