Specification	NTLGD3502NT1G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.6 A, 4.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	6-DFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

NTLGD3502N Series

Dual N-Channel Power MOSFET 20V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type
ON Semiconductor NTLGD3502NT1G	60 mOhm	6-VDFN Exposed Pad	MOSFET (Metal Oxide)	4 nC	2 N-Channel (Dual)	3.6 A 4.3 A	480 pF	-55 °C	150 °C	Logic Level Gate	6-DFN (3x3)	2 V	20 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package

Technical documentation and resources