Discrete Semiconductor Products

IRFB3306GPBF

LTB

TRANS MOSFET N-CH SI 60V 160A 3-PIN(3+TAB) TO-220AB TUBE

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Discrete Semiconductor Products

LTB

TRANS MOSFET N-CH SI 60V 160A 3-PIN(3+TAB) TO-220AB TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB3306GPBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	4520 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	230 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IRFB3306PBF	60 V	120 nC	175 °C	-55 °C	4520 pF	Through Hole	N-Channel	120 A	TO-220-3	TO-220AB	4 V	MOSFET (Metal Oxide)	4.2 mOhm	20 V	230 W	10 V
INFINEON IRFB3306GPBF	60 V	120 nC	175 °C	-55 °C	4520 pF	Through Hole	N-Channel	120 A	TO-220-3	TO-220AB	4 V	MOSFET (Metal Oxide)	4.2 mOhm	20 V	230 W	10 V

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