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TSOT-23-6, TSOT-6
Discrete Semiconductor Products

IRF5802TRPBF

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INFINEON

IR MOSFET™ N-CHANNEL SMALL POWER ; TSOP-6 PACKAGE; 1200 MOHM;

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TSOT-23-6, TSOT-6
Discrete Semiconductor Products

IRF5802TRPBF

Active
INFINEON

IR MOSFET™ N-CHANNEL SMALL POWER ; TSOP-6 PACKAGE; 1200 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF5802TRPBF
Current - Continuous Drain (Id) @ 25°C900 mA
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]88 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)2 W
Rds On (Max) @ Id, Vgs1.2 Ohm
Supplier Device PackageMicro6™(TSOP-6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.84
10$ 0.52
100$ 0.34
500$ 0.26
1000$ 0.23
Digi-Reel® 1$ 0.84
10$ 0.52
100$ 0.34
500$ 0.26
1000$ 0.23
N/A 3593$ 0.50
Tape & Reel (TR) 3000$ 0.20
6000$ 0.19
9000$ 0.18
15000$ 0.17
21000$ 0.16

Description

General part information

IRF5802 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources