Discrete Semiconductor Products

IRF7507TR

Obsolete

MOSFET N/P-CH 20V MICRO8

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V MICRO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7507TR

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	2.4 A
Current - Continuous Drain (Id) @ 25°C [Min]	1.7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP
Package / Case	0.118 in, 3 mm Width
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	700 mV

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Power - Max [Max]	Package / Case	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Technology	Supplier Device Package	Mounting Type	Configuration
INFINEON IRF7507TRPBF	260 pF	150 °C	-55 °C	700 mV	1.25 W	8-MSOP 8-TSSOP	0.118 in 3 mm Width	20 V	8 nC	Logic Level Gate	140 mOhm	1.7 A	2.4 A	MOSFET (Metal Oxide)	Micro8™	Surface Mount	N and P-Channel
INFINEON IRF7507TR	260 pF			700 mV	1.25 W	8-MSOP 8-TSSOP	0.118 in 3 mm Width	20 V	8 nC	Logic Level Gate	140 mOhm	1.7 A	2.4 A	MOSFET (Metal Oxide)	Micro8™	Surface Mount	N and P-Channel
INFINEON IRF7507PBF	260 pF			700 mV	1.25 W	8-MSOP 8-TSSOP	0.118 in 3 mm Width	20 V	8 nC	Logic Level Gate	140 mOhm	1.7 A	2.4 A	MOSFET (Metal Oxide)	Micro8™	Surface Mount	N and P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 2.4A, 1.7A 1.25W Surface Mount Micro8™

Technical documentation and resources