SIB437EDKT-T1-GE3

Obsolete

MOSFET P-CH 8V 9A PPAK TSC75-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 9A PPAK TSC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB437EDKT-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® TSC-75-6
Power Dissipation (Max)	13 W, 2.4 W
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	PowerPAK® TSC75-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	700 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Technology	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIB437EDKT-T1-GE3	-55 °C	150 °C	P-Channel	34 mOhm	PowerPAK® TSC75-6	9 A	1.2 V 4.5 V	700 mV	16 nC	PowerPAK® TSC-75-6	8 V	Surface Mount	2.4 W 13 W	MOSFET (Metal Oxide)	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® TSC75-6

Technical documentation and resources