Discrete Semiconductor Products

SIB437EDKT-T1-GE3

Obsolete

MOSFET P-CH 8V 9A PPAK TSC75-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 9A PPAK TSC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB437EDKT-T1-GE3

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	8 V
FET Type	P-Channel
Gate Charge (Max)	16 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® TSC-75-6
Package Name	PowerPAK® TSC75-6
Power Dissipation (Max)	2.4 W, 13 W
Rds On (Max)	34 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	700 mV

Part	Package Name	Rds On (Max)	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	FET Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Vgs (Max)
Vishay Dale SIB437EDKT-T1-GE3	PowerPAK® TSC75-6	34 mOhm	MOSFET (Metal Oxide)	Surface Mount	8 V	700 mV	9 A	PowerPAK® TSC-75-6	P-Channel	16 nC	-55 °C	150 °C	2.4 W 13 W	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 8 V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® TSC75-6

Technical documentation and resources