Discrete Semiconductor Products

FDN5618P_G

Obsolete

MOSFET P-CH 60V 1.25A SUPERSOT3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 1.25A SUPERSOT3

Technical Specifications

Parameters and characteristics for this part

Specification	FDN5618P_G

Current - Continuous Drain (Id) @ 25°C	1.25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13.8 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDN5618P_G	SC-59 SOT-23-3 TO-236-3	13.8 nC	430 pF	Surface Mount	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	500 mW	P-Channel	170 mOhm	SOT-23-3	60 V	1.25 A	3 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 1.25A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Technical documentation and resources

No documents available