Discrete Semiconductor Products

IRFHE4250DTRPBF

Obsolete

MOSFET 2N-CH 25V 86A/303A 32QFN

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 25V 86A/303A 32QFN

Technical Specifications

Parameters and characteristics for this part

Specification	IRFHE4250DTRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	86 A, 303 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1735 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	32-PowerWFQFN
Power - Max [Max]	156 W
Rds On (Max) @ Id, Vgs	2.75 mOhm
Rds On (Max) @ Id, Vgs	0.9 mOhm
Supplier Device Package	32-PQFN
Supplier Device Package [x]	6
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Feature	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Configuration	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power - Max
INFINEON IRFHE4250DTRPBF	150 °C	-55 °C	2.75 mOhm	0.9 mOhm	Surface Mount	86 A 303 A	1735 pF	2.1 V	Logic Level Gate	6	32-PQFN	6	156 W	20 nC	MOSFET (Metal Oxide)	32-PowerWFQFN	2 N-Channel (Dual)	25 V
INFINEON IRFHE4250DTRPBF	150 °C	-55 °C	2.75 mOhm	0.9 mOhm	Surface Mount	86 A 303 A	1735 pF 4765 pF	2.1 V 2.1 V		6	32-PQFN	6			MOSFET (Metal Oxide)	32-PowerVFQFN	2 N-Channel (Dual)	25 V	20 nC 53 nC	156 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 25V 86A (Tc), 303A (Tc) 156W (Tc) Surface Mount 32-PQFN (6x6)

Technical documentation and resources