Discrete Semiconductor Products

MMDT4413_R1_00001

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Panjit International Inc.

SOT-363, TRANSISTOR

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Discrete Semiconductor Products

Active

Panjit International Inc.

SOT-363, TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MMDT4413_R1_00001

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 hFE, 100 hFE
Frequency - Transition	200 MHz, 250 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	225 mW
Supplier Device Package	SOT-363
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce
Panjit International Inc. MMDT4413_R1_00001	100 nA	SOT-363	40 V	6-TSSOP SC-88 SOT-363	1 NPN 1 PNP	-55 °C	150 °C	200 MHz 250 MHz	600 mA	Surface Mount	225 mW	750 mV	100 hFE 100 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 40V 600mA 250MHz, 200MHz 225mW Surface Mount SOT-363

Technical documentation and resources