Discrete Semiconductor Products

SI1315DL-T1-GE3

Obsolete

MOSFET P-CH 8V 900MA SOT323

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 900MA SOT323

Technical Specifications

Parameters and characteristics for this part

Specification	SI1315DL-T1-GE3

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.4 nC
Input Capacitance (Ciss) (Max) @ Vds	112 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	400 mW, 300 mW
Rds On (Max) @ Id, Vgs [Max]	336 mOhm
Supplier Device Package	SC-70-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	800 mV

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Technology
Vishay General Semiconductor - Diodes Division SI1315DL-T1-GE3	SC-70-3	1.8 V 4.5 V	150 °C	-50 °C	8 V	900 mA	3.4 nC	800 mV	SC-70 SOT-323	8 V	Surface Mount	336 mOhm	112 pF	P-Channel	300 mW 400 mW	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 900mA (Tc) 300mW (Ta), 400mW (Tc) Surface Mount SC-70-3

Technical documentation and resources