
Discrete Semiconductor Products
G2SBA80-E3/45
ObsoleteVishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 1.5A GBL

Discrete Semiconductor Products
G2SBA80-E3/45
ObsoleteVishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 1.5A GBL
Technical Specifications
Parameters and characteristics for this part
| Specification | G2SBA80-E3/45 |
|---|---|
| Current - Average Rectified (Io) | 1.5 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | GBL, 4-SIP |
| Supplier Device Package | GBL |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
| Voltage - Peak Reverse (Max) [Max] | 800 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
G2SBA80 Series
Bridge Rectifier Single Phase Standard 800 V Through Hole GBL
Documents
Technical documentation and resources