Discrete Semiconductor Products

ATP114-TL-H

Obsolete

MOSFET P-CH 60V 55A ATPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 55A ATPAK

Technical Specifications

Parameters and characteristics for this part

Specification	ATP114-TL-H

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
ON Semiconductor ATP114-TL-H	MOSFET (Metal Oxide)	150 °C	4 V	10 V	92 nC	20 V	ATPAK	P-Channel	55 A	60 V	Surface Mount	ATPAK (2 leads+tab)	4000 pF	16 mOhm	60 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK

Technical documentation and resources

No documents available