Discrete Semiconductor Products

PBSS4350SS,115

Obsolete

TRANS 2NPN 50V 2.7A 8SO

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Discrete Semiconductor Products

Obsolete

TRANS 2NPN 50V 2.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4350SS,115

Current - Collector (Ic) (Max) [Max]	2.7 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Supplier Device Package	8-SO
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	340 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Package / Case	Package / Case	Power - Max [Max]	Transistor Type	Operating Temperature
Nexperia USA Inc. PBSS4350SS,115	340 mV	Surface Mount	100 nA	2.7 A	50 V	300	8-SO	0.154 in	8-SOIC	3.9 mm	2 W	2 NPN (Dual)	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 2.7A 2W Surface Mount 8-SO

Technical documentation and resources