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US2H Pin View
Discrete Semiconductor Products

CUHS10F60,H3F

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Toshiba Semiconductor and Storage

DIODES, 60 V/1 A SCHOTTKY BARRIER DIODE, SOD-323HE(US2H)

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US2H Pin View
Discrete Semiconductor Products

CUHS10F60,H3F

Active
Toshiba Semiconductor and Storage

DIODES, 60 V/1 A SCHOTTKY BARRIER DIODE, SOD-323HE(US2H)

Technical Specifications

Parameters and characteristics for this part

SpecificationCUHS10F60,H3F
Capacitance @ Vr, F130 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr40 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Package / Case2-SMD, Flat Leads
Speed500 ns, 200 mA
Supplier Device PackageUS2H
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
Digi-Reel® 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
N/A 13706$ 0.21
Tape & Reel (TR) 3000$ 0.08
6000$ 0.07
9000$ 0.06
15000$ 0.06
21000$ 0.06
30000$ 0.06
75000$ 0.05
150000$ 0.05

Description

General part information

CUHS10 Series

Diodes, 60 V/1 A Schottky Barrier Diode, SOD-323HE(US2H)