Discrete Semiconductor Products

GBI35M-T

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	GBI35M-T

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	4-SIP, GBI
Supplier Device Package	GBI
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	1 kV

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max)	Technology	Diode Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Peak Reverse (Max) [Max]
Diotec Semiconductor GBI35D	GBI	1.1 V	5 ÁA	Through Hole	4-SIP GBI	5 A	200 V	Standard	Single Phase	-50 °C	150 °C
Diotec Semiconductor GBI35J	GBI	1.1 V	5 µA	Through Hole	4-SIP GBI	5 A		Standard	Single Phase	-50 °C	150 °C	600 V
Diotec Semiconductor GBI35M-T	GBI	1.1 V	5 µA	Through Hole	4-SIP GBI	5 A		Standard	Single Phase	-50 °C	150 °C	1 kV
Diotec Semiconductor GBI35K	GBI	1.1 V	5 µA	Through Hole	4-SIP GBI	5 A	800 V	Standard	Single Phase	-50 °C	150 °C
Diotec Semiconductor GBI35G	GBI	1.1 V	5 µA	Through Hole	4-SIP GBI	5 A		Standard	Single Phase	-50 °C	150 °C	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBI

Technical documentation and resources