Discrete Semiconductor Products

V12P15HM3/H

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DIODE SCHOTTKY 150V 12A TO277A

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 150V 12A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V12P15HM3/H

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	250 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	1.08 V

Part	Current - Reverse Leakage @ Vr	Grade	Qualification	Mounting Type	Speed	Current - Average Rectified (Io)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Vishay General Semiconductor - Diodes Division V12P15HM3/H	250 µA	Automotive	AEC-Q101	Surface Mount	200 mA 500 ns	12 A	Schottky	150 °C	-40 °C	3-PowerDFN TO-277	1.08 V	TO-277A (SMPC)
Vishay General Semiconductor - Diodes Division V12P15-M3/I	250 µA			Surface Mount	200 mA 500 ns	12 A	Schottky	150 °C	-40 °C	3-PowerDFN TO-277	1.08 V	TO-277A (SMPC)
Vishay General Semiconductor - Diodes Division V12P15-M3/H	250 µA			Surface Mount	200 mA 500 ns	12 A	Schottky	150 °C	-40 °C	3-PowerDFN TO-277	1.08 V	TO-277A (SMPC)

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General part information

Diode 150 V 12A Surface Mount TO-277A (SMPC)

Technical documentation and resources

No documents available